A photomask for structuring a superconducting layer, superconductor layer and method for determining the extent of a underetching in the structuring of a superconductor layer.

摘要

A photomask for structuring a superconducting layer, characterised in that this forms a photomasks - control structure for determining the extent of a unterätzing, wherein the photomasks - control structure is provided for the tif terb as alkene is formed, the discrete areas of different width aufwe and wherein the photomasks - control structure, which is constructed as a measuring marks beam having the photomasks - reference structure is associated with.