Method for correction of local loading effects when etching photo masks for manufacturing integrated circuits based on knowledge from position dependent structural densities

摘要

With this method the first step is to determine the position dependent density of the mask structure. From this the position dependent strength of the loading effect is determined. The position dependent correction values for the mask structures are then determined from the loading effect strength. The knowledge that the position dependent loading effect strengths are calculable in advance from the position dependent structural density forms the basis for this method An Independent claim is also included for data processing system to design layout of mask