Cleaning a semiconductor wafer comprises treating the wafer under megasound with an aqueous solution containing ozone, and treating the wafer with an aqueous solution containing hydrofluoric acid and hydrochloric acid

摘要

Cleaning a semiconductor wafer having a hydrophobic surface before cleaning comprises treating the wafer under the influence of megasound with an aqueous solution containing ozone, and treating the wafer with an aqueous solution containing hydrofluoric acid and hydrochloric acid. The aqueous solution in the first step is impinged with megasound only from the point when an oxide layer having a thickness of 0.4-1.5 nm has formed on the surface of the wafer. The wafer is not contacted with substances which chemically react with the surface of the wafer between the two steps. An Independent claim is also included for a semiconductor wafer produced by the above process.