首页> 外国专利> Direct-write lithography method for forming sub-micrometer structure, e.g. photonic crystals, by interpolating layout data in-situ and selecting dose modulation to give exposure of circular areas by proximity effect

Direct-write lithography method for forming sub-micrometer structure, e.g. photonic crystals, by interpolating layout data in-situ and selecting dose modulation to give exposure of circular areas by proximity effect

机译:用于形成亚微米结构的直接写入光刻方法,例如光子晶体,通过原位插值布局数据并选择剂量调制以通过邻近效应使圆形区域曝光

摘要

Only the characteristic layout data of the borders of a rectangular area are stored in a storage medium for control of an electron beam. The remaining layout data are interpolated in-situ, and the dose modulation of the electron beam when directly writing the rectangular areas in relation to circular areas to be formed is selected so that a specific overexposure leads to exposure of circular areas by the proximity effect.
机译:仅将矩形区域的边界的特征布局数据存储在用于控制电子束的存储介质中。剩余的布局数据被原位插值,并且当相对于要形成的圆形区域直接写入矩形区域时,选择电子束的剂量调制,从而特定的过度曝光会由于邻近效应而导致圆形区域曝光。

著录项

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号