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XMR element containing circuit component for use in storage technology or magnetic field measurement has an additional passive component with a non-linear resistance characteristic in series with it to improve response
XMR element containing circuit component for use in storage technology or magnetic field measurement has an additional passive component with a non-linear resistance characteristic in series with it to improve response
Magnetoelectronic circuit component has at least one magnetoresistive component of the XMR type so that the component's overall resistance changes with the applied magnetic field. The XMR component (3) is connected to a passive component with a non-linear resistance characteristic such that the alteration in the total resistance of the two components when a magnetic field is applied is greater than the change in the resistance value of the XMR component on its own. The XMR and passive components are connected in series and the passive component is a diode (2) with a voltage dependent resistance, e.g. an Esaki, backward or Gunn diode.
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