首页> 外国专利> Process for growing single crystals comprises holding the crystal at a temperature close to the melting temperature whilst the crystal material drawn from the melt and solidified is partially screened from heat losses

Process for growing single crystals comprises holding the crystal at a temperature close to the melting temperature whilst the crystal material drawn from the melt and solidified is partially screened from heat losses

机译:生长单晶的方法包括将晶体保持在接近熔化温度的温度,同时从熔体中抽出并固化的晶体材料被部分地屏蔽掉热量损失

摘要

Process for growing single crystals comprises holding the crystal at a temperature close to the melting temperature whilst the crystal material drawn from the melt and solidified is partially screened from heat losses and/or the heat losses are compensated for by an additional heater. An Independent claim is also included for a device for growing single crystals.
机译:用于生长单晶的方法包括将晶体保持在接近熔融温度的温度,同时从熔体中抽出并固化的晶体材料从热损失中部分筛选出来和/或通过额外的加热器来补偿热损失。还包括用于生长单晶的装置的独立权利要求。

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