Statement of the top for photoresist to form a pattern in the end use

摘要

The photoresist upper coating composition includes a basic compound. The conjugated acid of the basic compound has pKa of at most 13. The basic compound contains nitrogen and is selected from amine derivatives (I) comprising amino acid derivatives, amide derivatives, compositions of urethane including urea, their salts, and their mixtures. Independent claims are given for: (a) a process for forming a photoresist pattern, involving coating a photoresist composition on a substrate, coating the upper coating composition on the upper part of the photoresist film, exposing the coated substrate to ultra-short wavelength (below 250 nm) light, and developing the exposed substrate; and (b) a semiconductor element fabricated by the process outlined in (a).