首页> 外国专利> QUANTIZED CONDUCTANCE ELEMENT, MAGNETIC VARIATION SENSING METHOD AND MAGNETISM SENSING METHOD USING THE SAME, AND CONDUCTANCE ELEMENT MANUFACTURING METHOD

QUANTIZED CONDUCTANCE ELEMENT, MAGNETIC VARIATION SENSING METHOD AND MAGNETISM SENSING METHOD USING THE SAME, AND CONDUCTANCE ELEMENT MANUFACTURING METHOD

机译:量化的电导元件,使用其的磁变化感测方法和磁感测方法以及电导元件制造方法

摘要

PROBLEM TO BE SOLVED: To provide a quantized conductance element capable of properly sensing feeble magnetic variations and continuously with high sensitivity, especially very weak magnetism which is retained by nanoscale magnetic cells as formed in a terabit-level magnetic recording medium; to provide a magnetic variation sensing method and a magnetism sensing method which uses the same; and to provide a quantized conductance element manufacturing method.;SOLUTION: A frist electrode (11) coated by an ion conducting layer (13) and a second electrode (12) are located close to each other. At the location where the two are arranged close to each other, they are conductively connected with each other through a macroscale linking section (15) so formed on the first electrode (11) as to penetrate the ion-conducting layer (13), and then through a metal nanoscale link (14), which is formed in between the exposed surface of the macroscale linking section (15) and the second electrode (12) and presents a quantized conductance. The magnetic variation sensing method and the magnetism sensing method employ the quantized conductance element, and the manufacturing method manufactures the quantized conductance element.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种量化的电导元件,其能够适当地感测微弱的磁变化并且连续地具有高灵敏度,尤其是非常弱的磁性,这种磁性被形成在太比特级磁记录介质中的纳米级磁性单元保留;提供一种磁变化检测方法和使用该方法的磁检测方法;解决方案:覆盖有离子导电层(13)的第一电极(11)和第二电极(12)彼此靠近。在两者彼此靠近布置的位置处,它们通过形成在第一电极(11)上以穿透离子导电层(13)的宏观连接部分(15)彼此导电连接,并且然后通过金属纳米级连接(14),该金属纳米级连接形成在宏连接部分(15)的裸露表面和第二电极(12)之间,并呈现出量化的电导率。磁变化感应法和磁感应法采用了量化的电导元件,并且制造方法制造了量化的电导元件。;版权所有:(C)2006,日本特许厅&日本国家电子信息研究所

著录项

  • 公开/公告号JP2005286084A

    专利类型

  • 公开/公告日2005-10-13

    原文格式PDF

  • 申请/专利权人 UNIV WASEDA;

    申请/专利号JP20040097445

  • 申请日2004-03-30

  • 分类号H01L43/00;B82B3/00;G01R33/02;G11B5/33;H01L29/06;

  • 国家 JP

  • 入库时间 2022-08-21 22:37:40

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