首页> 外国专利> THIN FILM DEFECT CORRECTION METHOD, DEFECTIVE-CORRECTING THIN FILM, METHOD OF FORMING CRYSTALLINE THIN FILM, THE CRYSTALLINE THIN FILM, AND THIN FILM SEMICONDUCTOR DEVICE

THIN FILM DEFECT CORRECTION METHOD, DEFECTIVE-CORRECTING THIN FILM, METHOD OF FORMING CRYSTALLINE THIN FILM, THE CRYSTALLINE THIN FILM, AND THIN FILM SEMICONDUCTOR DEVICE

机译:薄膜缺陷校正方法,缺陷校正薄膜,形成晶体薄膜的方法,晶体薄膜和薄膜半导体器件

摘要

PROBLEM TO BE SOLVED: To correct the defective portion, such that an HF solution does not corrode from the defective portion by cleaning with the HF solution and the like and etching is not carried out to lower layers, such as an insulating film and a board without looking for, in a one by one, the defective portions of a thin film where the thin film has not been formed.;SOLUTION: A silica film 7 is formed in a self-aligned manner on a defective portion 4 of an amorphous silica film 3 as a correction film for correcting defection byradiating light 5, whose coefficient of absorption by a substrate 1 is small and whose coefficient of absorption by the amorphous silica film 3 is large from the substrate 1 side (the rear surface of a substrate portion), making light penetrate only through the defective portion 4 of the amorphous silica film 3 in which the amorphous silica film 3 has not been formed, and making an optical CVD reaction caused at the front surface side of the amorphous silica film 3, when the defective portion 4 of the amorphous silica film 3 in which a thin film is not formed locally in the amorphous silica film 3 is corrected by an optical CVD method.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:校正缺陷部分,以使HF溶液不会因用HF溶液等清洗而从缺陷部分腐蚀,并且不会对绝缘膜和基板等下层进行蚀刻而不是一个接一个地寻找尚未形成薄膜的薄膜的缺陷部分。;解决方案:二氧化硅膜7以自对准的方式形成在非晶态二氧化硅的缺陷部分4上从基板1侧(基板部的背面)看,作为用于通过光5校正缺陷的校正膜的膜3,其被基板1的吸收系数小,并且非晶硅膜3的吸收系数大。然后,使光仅透过未形成有非晶硅膜3的非晶硅膜3的缺陷部4,在非晶硅的表面侧引起光CVD反应。当用光学CVD方法校正在非晶硅膜3中未局部形成薄膜的非晶硅膜3的缺陷部分4时,膜3会受到污染。;版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005252209A

    专利类型

  • 公开/公告日2005-09-15

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20040064833

  • 发明设计人 TAKAGI MINORU;

    申请日2004-03-08

  • 分类号H01L21/205;H01L21/20;

  • 国家 JP

  • 入库时间 2022-08-21 22:36:43

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