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SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, LIQUID CRYSTAL TELEVISION AND EL TELEVISION

机译:半导体器件,制造相同方法的液晶电视和液晶电视

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a high withstand voltage and a high step coverage property of a gate insulating layer by a manufacturing method with a small number of processes and high usability of materials.;SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a plurality of first conductive layers over a substrate, forming a first insulating layer to fill the gaps of the plurality of the first conductive layers, forming a second insulating layer over the first insulating layer and the plurality of the first conductive layers, and forming a semiconductor region and a second conductive layer over the second insulating layer.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:通过具有少量工序和高材料可用性的制造方法来提供具有高耐压和栅极绝缘层的高阶梯覆盖特性的半导体器件。解决方案:一种制造半导体器件的方法半导体器件包括以下步骤:在衬底上方形成多个第一导电层,形成第一绝缘层以填充多个第一导电层的间隙,在第一绝缘层和多个绝缘层上方形成第二绝缘层。第一导电层,并在第二绝缘层上形成半导体区域和第二导电层。;版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2005311341A

    专利类型

  • 公开/公告日2005-11-04

    原文格式PDF

  • 申请/专利权人 SEMICONDUCTOR ENERGY LAB CO LTD;

    申请/专利号JP20050085195

  • 发明设计人 MAEKAWA SHINJI;

    申请日2005-03-24

  • 分类号H01L21/336;G02F1/136;H01L21/288;H01L29/786;

  • 国家 JP

  • 入库时间 2022-08-21 22:33:58

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