首页> 外国专利> M1-xAx/Ni1-yBy/Snz-1Cz-BASED HALF-HEUSLER TYPE THERMOELECTRIC MATERIAL FOR HIGH TEMPERATURE AND ITS MANUFACTURING METHOD

M1-xAx/Ni1-yBy/Snz-1Cz-BASED HALF-HEUSLER TYPE THERMOELECTRIC MATERIAL FOR HIGH TEMPERATURE AND ITS MANUFACTURING METHOD

机译:基于M1-xAx / Ni1-yBy / Snz-1Cz的高温半霍斯勒型热电材料及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide an M1-xAx/Ni1-yBy/Snz-1Cz-based half-Heusler type thermoelectric material for high temperature that has a performance suitable for general uses, and its manufacturing method.;SOLUTION: The M1-xAx/Ni1-yBy/Snz-1Cz-based half-Heusler type thermoelectric material for high temperature is a thermoelectric material wherein a part of an M1-x site and Ni1-y is replaced with Ax and By elements with a large difference in atomic weight and a part of an Snz-1 is replaced with another element Cz in the same manner, and their composition ratio is optimized so that the electrical characteristics of the thermoelectric material can be improved. In the manufacturing method thereof, a material having a specified composition ratio is solid-solution alloyed by arc-melting for example, and then the obtained ingot is crushed and refined. Then, the crushed and refined alloy powder is sintered into a thermoelectric material with an optional diameter by hot pressing for example, and it is subjected to heat treatment to uniformly distribute the contained elements.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供M 1-x A x / Ni 1-y B y /具有适用于一般用途的性能的Sn z-1 C z 基高温半霍斯勒型热电材料及其制造方法。 1-x A x / Ni 1-y B y / Sn z-1 C z 的高温半霍斯勒型热电材料是其中M 1-x 位的一部分和Ni 1-的热电材料。 y 替换为原子量相差很大的Sn z-1 的A x 和B y 元素用相同的方式用另一元素C z 代替>,并优化其组成比,从而可以改善热电材料的电特性。在其制造方法中,例如通过电弧熔化将具有特定组成比的材料固溶合金化,然后将得到的铸锭粉碎并精制。然后,将经过粉碎和精炼的合金粉末通过例如热压烧结成具有任意直径的热电材料,并对其进行热处理,以使所含元素均匀分布。版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005019713A

    专利类型

  • 公开/公告日2005-01-20

    原文格式PDF

  • 申请/专利权人 RIKOGAKU SHINKOKAI;

    申请/专利号JP20030182978

  • 申请日2003-06-26

  • 分类号H01L35/16;B22F3/14;B22F3/24;C22C13/00;H01L35/18;H01L35/20;H01L35/34;

  • 国家 JP

  • 入库时间 2022-08-21 22:33:49

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