首页> 外国专利> JOINT GATE STATIC INDUCTION THYRISTOR AND HIGH-VOLTAGE PULSE GENERATOR USING SAME

JOINT GATE STATIC INDUCTION THYRISTOR AND HIGH-VOLTAGE PULSE GENERATOR USING SAME

机译:使用相同的门控静态感应晶闸管和高压脉冲发生器

摘要

PROBLEM TO BE SOLVED: To provide a compact and inexpensive static induction thyristor for high-voltage pulse generator that is hard to be broken because of high voltage increasing rate during operation and can generate a high-voltage pulse with a short pulse width.;SOLUTION: In the static induction thyristor 14, the impurity concentration or thickness in a base region and a buffer layer region is determined so that a peak voltage VD attained by a peak current Ip in a punch-through status does not exceed a withstand voltage of the static induction thyristor 14. An SI thyristor can be realized wherein the peak voltage VD does not largely exceed the withstand voltage of the static induction thyristor 14 even if the peak current Ip is increased and that has a self protection function to prevent breakage autonomously and does not fail turning-on performance. In addition, the conduction region of a gate channel is made to be a minimum required, thus providing a compact static induction thyristor that can generate a short pulse.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:要解决的问题:为高压脉冲发生器提供一种紧凑而廉价的静电感应晶闸管,该晶闸管由于工作期间的高电压上升率而难以损坏,并且可以产生短脉冲宽度的高压脉冲。 :在静电感应晶闸管14中,确定基极区域和缓冲层区域中的杂质浓度或厚度,使得通过峰值电流I p D 。在穿通状态下的Sub>不超过静态感应晶闸管14的耐压。可以实现SI晶闸管,其中峰值电压V D 不大地超过静态的耐压。即使峰值电流I p 增大,感应晶闸管14也具有自保护功能,可以自动防止损坏,并且不会导通性能下降。另外,使栅极沟道的导通区域最小化,从而提供了一种紧凑的静电感应晶闸管,该晶闸管可以产生短脉冲。;版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005268465A

    专利类型

  • 公开/公告日2005-09-29

    原文格式PDF

  • 申请/专利权人 NGK INSULATORS LTD;

    申请/专利号JP20040077575

  • 发明设计人 SHIMIZU NAOHIRO;SEKIYA TAKAYUKI;

    申请日2004-03-18

  • 分类号H01L29/74;

  • 国家 JP

  • 入库时间 2022-08-21 22:33:13

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