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NANO SCALE FIELD EFFECT ELEMENT HAVING AIR GAP BETWEEN SOURCE ELECTRODE AND DRAIN ELECTRODE PROCESSED WITH FINE METAL PARTICLE COATED WITH THIOL OR DISULFIDE MOLECULE
NANO SCALE FIELD EFFECT ELEMENT HAVING AIR GAP BETWEEN SOURCE ELECTRODE AND DRAIN ELECTRODE PROCESSED WITH FINE METAL PARTICLE COATED WITH THIOL OR DISULFIDE MOLECULE
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机译:含硫醇或二硫化物分子的细金属颗粒处理的源电极和漏电极之间具有气隙的纳米尺度场效应元素
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摘要
PROBLEM TO BE SOLVED: To provide a nanometer scale field effect element exhibiting good reproducibility of signal.;SOLUTION: In a field effect element comprising a source electrode S, a gate electrode, and a drain electrode D fabricated in a semiconductor substrate in nanometer scale, a space above the semiconductor substrate connecting the source electrode and the drain electrode is processed with fine metal particles coated with thiol or disulfide represented by general formula CH3(CH2)nSH or (CH3(CH2)nSH-)2 (in the formula, n is an integer of 3-30).;COPYRIGHT: (C)2005,JPO&NCIPI
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机译:解决的问题:提供显示出良好信号再现性的纳米级场效应元件;解决方案:在包括以纳米级尺寸制造在半导体衬底中的源电极S,栅电极和漏电极D的场效应元件中然后,用涂覆有通式CH 3 Sub>(CH 2 Sub>)表示的硫醇或二硫化物的细金属颗粒处理连接源电极和漏电极的半导体衬底上方的空间。 n Sub> SH或(CH 3 Sub>(CH 2 Sub>) n Sub> SH-) 2 Sub> (在公式中,n是3到30的整数)。;版权:(C)2005,JPO&NCIPI
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