首页> 外国专利> METHOD OF GENERATING DELAY TROUBLE TEST PATTERN FOR SEMICONDUCTOR INTEGRATED CIRCUIT, AND METHOD OF INSPECTING DELAY TROUBLE THEREFOR

METHOD OF GENERATING DELAY TROUBLE TEST PATTERN FOR SEMICONDUCTOR INTEGRATED CIRCUIT, AND METHOD OF INSPECTING DELAY TROUBLE THEREFOR

机译:半导体集成电路的延迟故障测试图的生成方法及延迟故障的检查方法

摘要

PROBLEM TO BE SOLVED: To provide a method of generating a test pattern capable of conducting a dynamic test for each path in a semiconductor integrated circuit including a memory circuit.;SOLUTION: An objective trouble is selected from a data line of the memory circuit (step 101), the longest test-allowable path corresponding to the selected objective trouble is selected (step 102), an initialization pattern (step 103) and a transition pattern (step 104) of the longest test-allowable path are found, an initialization pattern (step 105) and a transition pattern (step 106) of an address line are found, an initialization pattern (step 107) and a transition pattern (step 108) of a control signal group are found, a value provided by reading out a value written in the memory circuit into an output set value scanning FF group is found as an expected value (step 109), and the patterns found in the steps 103-109 are generated as a serial pattern (step 110).;COPYRIGHT: (C)2005,JPO&NCIPI
机译:要解决的问题:提供一种生成能够对包括存储电路的半导体集成电路中的每个路径进行动态测试的测试图案的方法。解决方案:从存储电路的数据线中选择一种客观故障(步骤101),选择对应于所选择的目标故障的最长测试允许路径(步骤102),找到最长测试允许路径的初始化模式(步骤103)和过渡模式(步骤104),进行初始化找到地址线的模式(步骤105)和过渡模式(步骤106),找到控制信号组的初始化模式(步骤107)和过渡模式(步骤108),通过读出将该存储电路中写入输出设定值扫描FF组的值作为期望值(步骤109),并将在步骤103-109中找到的图案作为串行图案来生成(步骤110)。 C)2005,日本特许厅

著录项

  • 公开/公告号JP2005201829A

    专利类型

  • 公开/公告日2005-07-28

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC IND CO LTD;

    申请/专利号JP20040009929

  • 发明设计人 YOSHIMURA SHINICHI;

    申请日2004-01-19

  • 分类号G01R31/28;G01R31/3183;G06F11/22;

  • 国家 JP

  • 入库时间 2022-08-21 22:32:44

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