首页> 外国专利> MECHANOCHEMICAL POLISHING METHOD AND MECHANOCHEMICAL POLISHING DEVICE

MECHANOCHEMICAL POLISHING METHOD AND MECHANOCHEMICAL POLISHING DEVICE

机译:机械化学抛光方法和机械化学抛光装置

摘要

PROBLEM TO BE SOLVED: To provide a mechanochemical polishing method and a mechanochemical polishing method with reduced environmental load by suppressing the rise of the temperature of a work without obstructing the induction of a chemical reaction in mechanochemical polishing to increase polishing efficiency and reduce cost.;SOLUTION: An atomized water W1 in the state of a grinding wheel T not pressed against the surface of a wafer H suckingly placed on a turn table D through a chuck C and rotated is sprayed from a cooling liquid supply nozzle 2 without spraying on the grinding wheel T to cool the wafer H in a wet state. In this state, the mechanochemical polishing is started and, after the wafer H is brought into a water-repellant state, the atomized water W1 sprayed from the cooling liquid supply nozzle 2 is switched to a liquid water W2 to cool the wafer H while supplying the liquid water W2 to the surface of the wafer H without spraying the water on the grinding wheel T for the mechanochemical polishing.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种机械化学抛光方法和一种机械化学抛光方法,其通过抑制工件的温度升高而又不妨碍机械化学抛光中的化学反应的产生,从而减少了环境负荷,从而提高了抛光效率并降低了成本。解决方案:在砂轮T的状态下,雾化水W1未被吸盘通过吸盘C压在转盘D上的晶片H的表面上,而是从冷却液供应喷嘴2喷出,而没有喷到研磨盘上轮T冷却湿态的晶片H。在该状态下,开始机械化学研磨,在使晶片H成为疏水状态后,从冷却液供给喷嘴2喷出的雾化水W1切换为液态水W2,一边供给一边冷却晶片H。将液态水W2喷到晶圆H的表面上,而无需将水喷在砂轮T上进行机械化学抛光。;版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005046947A

    专利类型

  • 公开/公告日2005-02-24

    原文格式PDF

  • 申请/专利权人 NIPPEI TOYAMA CORP;

    申请/专利号JP20030280641

  • 发明设计人 MURAI SHIRO;OKUYAMA TETSUO;

    申请日2003-07-28

  • 分类号B24B55/02;B24B1/00;H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-21 22:32:01

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