首页> 外国专利> COLD CATHODE FIELD EMISSION DEVICE, COLD CATHODE FIELD EMISSION DISPLAY DEVICE, AND THEIR MANUFACTURING METHODS

COLD CATHODE FIELD EMISSION DEVICE, COLD CATHODE FIELD EMISSION DISPLAY DEVICE, AND THEIR MANUFACTURING METHODS

机译:阴极冷阴极场发射装置,阴极冷阴极场发射装置及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a cold cathode field emission device excellent in light emitting property, having reliable emitters, made possible to reduce a drive voltage and improve focus property, a cold cathode electric field electron emitting display device including this element, and their manufacturing methods.;SOLUTION: The cold cathode field emission display element 26 comprises a field emission device 1, comprising a three pole structure which comprises a cathode 6, a gate electrode 4 and an emitter 7 which is an electron emitting part connected to the cathode 6 on a substrate 3. The cathode 6 and the emitter 7 are made in order on a lower gate electrode 13 and an insulation layer 5 on the substrate 3 and a columnar gate electrode 12 is formed to face to the emitter 7. A gate electrode 4 comprises the lower gate electrode 13 and a columnar gate electrode 12.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种具有优异的发光性能,具有可靠的发射器,能够降低驱动电压并提高聚焦性能的冷阴极场致发射器件,包括该元件的冷阴极电场电子发射显示器件及其制造方法。解决方案:冷阴极场发射显示元件26包括场发射器件1,该场发射器件1包括三极结构,该三极结构包括阴极6,栅电极4和作为与阴极连接的电子发射部分的发射器7。如图6所示,在基板3上依次形成阴极6和发射极7。在下部栅极13上依次形成阴极6和发射极7,并在基板3上形成绝缘层5,并形成圆柱状的栅极12以面对发射极7。图4包括下栅电极13和柱状栅电极12。版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005149850A

    专利类型

  • 公开/公告日2005-06-09

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP20030384027

  • 发明设计人 ASANO TAKEYOSHI;

    申请日2003-11-13

  • 分类号H01J1/304;H01J9/02;H01J29/04;H01J31/12;

  • 国家 JP

  • 入库时间 2022-08-21 22:31:13

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