Method of measuring the dislocation pit density in the compound semiconductor wafer

摘要

PPROBLEM TO BE SOLVED: To provide a measuring method of dislocation pit density in a wafer for accurately measuring the dislocation pit density, regardless of surface planarity and the overlapping of dislocation pits. PSOLUTION: The measuring method includes a process for obtaining the enlarged monochrome image of a wafer crystal surface that is subjected to etching treatment, a process for obtaining a first binarization image including the contour section of a dislocation pit according to the enlarged monochrome image, a process for obtaining a second binarization image, including the core section of the dislocation pit according to the enlarged monochrome image, a process for extracting a portion, where both the images are overlapped from the obtained first and second images to obtain a third binarization image and for obtaining an independent figure included in the third binarization image for counting, and a process for obtaining dislocation pit density with a counted numerical value as the number of dislocation pits. PCOPYRIGHT: (C)2003,JPO