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In the antireflection filter which possesses the antireflection formation which at least consists of the dielectric thin film

机译:在具有至少由电介质薄膜构成的防反射构造的防反射滤光器中

摘要

PROBLEM TO BE SOLVED: To obtain an antireflection filter having improved contamination resistance and scratching resistance by forming a film containing an alkoxysilane compd. having specified perfluoropolyether groups and an alkoxysilane compd. having specified long-chain hydrocarbon groups on the surface of an antireflection layer. SOLUTION: This antireflection filter has an antireflection layer comprising a dielectric thin film on the surface of a transparent base body. Further, the filter has a coating film on the surface is the antireflection layer, and the coating film contains an alkoxysilane compd. having perfluoropolyether groups expressed by Rf(CO-X-R1 -Si(OR2 )3 )n and an alkoxysilane compd. having long- chain hydrocarbon groups expressed by formula R3 -Si(OR2 )3 . In formulae, Rf is a perfluoropolyether group, R1 is an alkylene group, R2 is an alkyl group, R3 is a long-chain hydrocarbon group having =10 carbon atoms, X is a group selected from among -O-, -NH- and -S- and (n) is a natural number =2.
机译:解决的问题:通过形成包含复合的烷氧基硅烷的膜来获得具有改善的耐污染性和耐刮擦性的抗反射滤光片。具有指定的全氟聚醚基团和烷氧基硅烷的化合物。在抗反射层的表面上具有特定的长链烃基。解决方案:此防反射滤镜的防反射层在透明基体表面上具有一层电介质薄膜。此外,该滤光器在其表面上具有抗反射层的涂膜,并且该涂膜包含复合的烷氧基硅烷。具有由Rf(CO-X-R1-Si(OR2)3)n表示的全氟聚醚基和烷氧基硅烷的化合物。具有由式R 3 -Si(OR 2)3表示的长链烃基。式中,Rf为全氟聚醚基,R1为亚烷基,R2为烷基,R3为碳原子数≥10的长链烃基,X为选自-O-,-NH-的基团。 -S-和(n)是自然数<= 2。

著录项

  • 公开/公告号JP3709632B2

    专利类型

  • 公开/公告日2005-10-26

    原文格式PDF

  • 申请/专利权人 ソニー株式会社;

    申请/专利号JP19960309564

  • 发明设计人 花岡 英章;近藤 洋文;

    申请日1996-11-20

  • 分类号G02B1/11;C08L83/00;C09D183/04;

  • 国家 JP

  • 入库时间 2022-08-21 22:29:20

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