Xenon (Xe) with implantation for the advance amorphous conversion

摘要

A SOI substrate (101) is preamorphized by ion implanting Xe 15 prior to forming source/drain extensions (21) and source/drain regions (41), thereby virtually eliminating or significantly reducing floating body effects. Other aspects comprise ion implanting a Xe 2 + into a bulk silicon or SOI substrate to effect preeamorphization prior to forming source/drain extensions and regions having shallow junctions with reduced vertical and lateral straggle.