Accumulation of ALD nitriding tantalum and alpha phase tantalum for copper electrode formation application

摘要

Method in order to form electrode wiring on the baseplate is offered. With one feature, as for this method, at least by introducing with the dosage of one or more of metal content chemical compound and the dosage of one or more of nitrogen content chemical compound alternately, with respect to one part of metal layer the crystal way, it shows structure and accumulating 2nd metal layer at least with respect to one part of thing and the above-mentioned seed layer which accumulate seed layer at least with respect to one part of thing and the above-mentioned barrier layer which accumulate the high fusion point metal content barrier layer which possesses the thickness which is sufficient in order to control the atomic migration and, it includes. Selective figure Figure 1