Reforming manner of the ferroelectric film which features that reforming manner

摘要

PROBLEM TO BE SOLVED: To prevent generation of a bond defect in a ferroelectric film in an amorphous state by performing oxidation after the formation of a ferroelectric film in an amorphous state, and then heat-treating and crystalizing the oxidation-treated ferroelectric film. SOLUTION: After the formation of a base SiO2 film 11 by thermal oxidation of the surface of a silicon substrate, a Ti film 12 and a Pt lower electrode 13 are deposited successively on the SiO2 film 11, to make a lower electrode for a ferroelectric capacitor in an amorphous state. Following this, a sputtered PZT film 14 is formed under 0.02 Torr obtained by flowing a process gas of Ar and O2 having PbZrTiO3 composition. On this PZT film 14, hydrogen peroxide water 15 is applied, and removed one second later. Following this, heat treatment is performed in an atmospheric oxygen atmosphere of 650 deg.C, and the PZT film 14 is crystalized as an perovskite oxide into a crystalized PZT film 16.