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Ferroelectric capacitor, strength semiconductor device comprising a dielectric capacitor, strength Method of manufacturing a semiconductor device and a dielectric capacitor
Ferroelectric capacitor, strength semiconductor device comprising a dielectric capacitor, strength Method of manufacturing a semiconductor device and a dielectric capacitor
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机译:铁电电容器,包括电介质电容器的强度半导体装置,强度半导体装置的制造方法和电介质电容器
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摘要
A ferroelectric capacitor including a bottom electrode which has a projecting portion, a top electrode, a ferroelectric layer and a dielectric layer formed between the bottom electrode and the top electrode. The dielectric layer is formed on a peripheral area of the bottom electrode. The ferroelectric layer is formed on the dielectric layer and on the projecting portion of the bottom electrode. As a result, a damaged layer which is formed during an etching process occurs at the ineffective area of the ferroelectric capacitor.
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