Record regenerative manner of the memory device, the reluctance component and the 1st magnetic layer which it magnetized

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistive element that is used as a magnetic memory element or the like, has a stable magnetization state, and can stably record information with low current consumption. SOLUTION: A first magnetic layer 1 that is magnetized in a film surface vertical direction, a first non-magnetic layer N1, a second magnetic layer 2 that is magnetized in the film surface vertical direction, a second non-magnetic layer N2, and a third magnetic layer N3 that is magnetized in a film surface vertical direction, are laminated in order. As each of non-magnetic layers N1 and N2, a spin tunnel insulating film is preferably used.