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The fixed magnetic layer where magnetization direction is locked on the thin film magnetic head null antiferromagnetism

机译:磁化方向锁定在薄膜磁头上的固定磁性层无效反铁磁性

摘要

PROBLEM TO BE SOLVED: To solve the problem where Barkhausen noise is apt to be generated since a hard bias layer generating an intensive bias magnetic field is formed below a free magnetic layer, and only a hard bias layer whose bias magnetic field is weak is formed on a side part of the free magnetic layer which are caused by large film thickness of an antiferromagnetic layer, in the conventional spin valve type thin film element in which a fixed magnetic layer, a nonmagnetic conducting layer and the free magnetic layer are laminated on the antiferromagnetic layer and the hard bias layer is formed on side surfaces of the four layers. SOLUTION: By forming a hard bias layer 6 on an antiferromagnetic layer 1, a horizontal surface 6' can be formed in a part higher than a lower surface 4' of a free magnetic layer 4 with small film thickness. Consequently, the hard bias layer of an h1 part which generates an intensive bias magnetic field is made to abut against a side surface of the free magnetic layer 4, magnetization of the free magnetic layer 4 becomes easy to be made a single magnetic domain in the X direction, and generation of Barkhausen noise can be reduced.
机译:解决的问题:由于在自由磁性层的下方形成有产生强偏置磁场的硬偏置层,并且仅形成偏置磁场弱的硬偏置层,因此容易产生巴克豪森噪声的问题。在常规的自旋阀型薄膜元件中,在由反铁磁性层的大膜厚引起的自由磁性层的侧部上,在其上层叠有固定磁性层,非磁性导电层和自由磁性层。在四层的侧面上形成反铁磁层和硬偏置层。解决方案:通过在反铁磁层1上形成硬偏置层6,可以在膜厚度较小的自由磁层4的下表面4'的较高部分形成水平面6'。因此,使产生强烈的偏置磁场的h1部分的硬偏置层与自由磁性层4的侧面抵接。容易使自由磁性层4的磁化成为单磁畴。 X方向和Barkhausen噪声的产生可以减少。

著录项

  • 公开/公告号JP3607629B2

    专利类型

  • 公开/公告日2005-01-05

    原文格式PDF

  • 申请/专利权人 アルプス電気株式会社;

    申请/专利号JP20010066127

  • 发明设计人 斎藤 正路;柿原 芳彦;

    申请日2001-03-09

  • 分类号H01L43/08;G01R33/09;G11B5/39;H01F10/12;H01F10/26;H01F10/32;

  • 国家 JP

  • 入库时间 2022-08-21 22:26:19

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