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And FET type sensor, the base sequence detection method and ion concentration detection method using the sensor

机译:以及FET型传感器,使用该传感器的碱基序列检测方法和离子浓度检测方法

摘要

On the surface of a semiconductor substrate (1), the floating diffusion region, and (2) an input diode portion comprising a diffusion region of opposite type to the substrate (3), insulating film and before the floating diffusion region from the input diode section (5) above sensing unit comprising an ion sensitive film input gate which is fixed to the output gate (6) and (7), fixed to the insulating film of the input / output gate between (9), the other side of the floating diffusion and a reset gate, which is fixed to the insulating film at a position connected to the part (8), the reset diode part comprising a diffusion region of opposite type to the substrate formed on the opposite side of the floating diffusion region of the reset gate (4) , using the FET sensor for detecting an amount of charge the floating diffusion region are accumulated according to the number of pumping the depth of the potential well changes according to the ion concentration to be applied to the sensing section, the detection of the nucleotide sequence and the ion concentration detected perform.
机译:在半导体衬底(1),浮动扩散区和(2)的表面上,输入二极管部分包括与衬底(3)相反类型的扩散区,绝缘膜,并且在浮动扩散区之前从输入二极管感测单元上方的部分(5)包括离子敏感膜输入栅极,其固定到输出栅极(6)和(7),固定到输入/输出栅极的绝缘膜,位于(9)之间,另一侧浮置扩散层和复位栅极,其在与部分(8)相连的位置固定到绝缘膜,该复位二极管部分包括与衬底相反类型的扩散区域,该扩散区域形成在衬底的浮置扩散区域的相对侧。复位栅极(4),利用FET传感器根据泵浦次数来检测浮动扩散区域的电荷量,根据施加到检测秒的离子浓度,势阱变化的深度然后,进行核苷酸序列和所检测离子浓度的检测。

著录项

  • 公开/公告号JPWO2003042683A1

    专利类型

  • 公开/公告日2005-03-10

    原文格式PDF

  • 申请/专利权人 株式会社バイオエックス;澤田 和明;

    申请/专利号JP20030544466

  • 发明设计人 内山 正克;澤田 和明;

    申请日2002-11-11

  • 分类号G01N27/414;C12M1/00;C12Q1/68;G01N27/327;H01L21/822;H01L27/04;

  • 国家 JP

  • 入库时间 2022-08-21 22:26:19

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