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Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same
Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same
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机译:具有与由电极孔的侧壁限定的相变材料接触的表面积的相变存储器件及其形成方法
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摘要
Phase change memory devices and methods of making phase changeable memory devices including a heating electrode disposed on a substrate are provided. The heating electrode includes an electrode hole in the heating electrode. A phase change material pattern is provided in the electrode hole and contacts a sidewall of the electrode hole. In some embodiments, the electrode hole extends through the heating electrode. In some embodiments, the phase changeable material pattern only contacts the electrode at a sidewall of the electrode hole
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