;is used as a host material in a guest-host layer, such as the emissive layer and/or one of the charge transport layers. In the general formula above, R1 represents an electron donating moiety or an electron accepting moiety; each R2 to R7 is present optionally; and each R2 to R7 independently represents an electron donating moiety or an electron accepting moiety."/>
公开/公告号US2004247933A1
专利类型
公开/公告日2004-12-09
原文格式PDF
申请/专利权人 CANON KABUSHIKI KAISHA;
申请/专利号US20030452732
发明设计人 TRAVIS P. S. THOMS;
申请日2003-06-03
分类号H05B33/12;
国家 US
入库时间 2022-08-21 22:22:13