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Magnetostrictive strain sensor with hall effect

机译:具有霍尔效应的磁致伸缩应变传感器

摘要

A magnetostrictive strain sensor includes a Hall effect sensor for measuring the change in magnetic flux a magnetic circuit including a magnetostrictive element. A strain sensing apparatus includes one or more magnetic elements defining a magnetic circuit having a gap, and including a magnetostrictive element adapted to receive a load force. A Hall effect sensor is disposed within the gap for sensing a change in magnetic flux in the magnetic circuit. The Hall effect sensor may include a programmable circuit for zeroing and calibrating the sensing apparatus, and for providing temperature compensation. The magnetostrictive element may be magnetized to form the magnetized element, and may be formed from material known as TERFENOL-D.
机译:磁致伸缩应变传感器包括用于测量磁通量变化的霍尔效应传感器,该磁路包括磁致伸缩元件。一种应变感测设备,包括一个或多个磁性元件,该磁性元件限定具有间隙的磁路,并且包括适于接收负载力的磁致伸缩元件。霍尔效应传感器布置在间隙内,用于感测磁路中的磁通量的变化。霍尔效应传感器可以包括用于对感测设备进行调零和校准并提供温度补偿的可编程电路。磁致伸缩元件可以被磁化以形成磁化元件,并且可以由被称为TERFENOL-D的材料形成。

著录项

  • 公开/公告号US6931940B2

    专利类型

  • 公开/公告日2005-08-23

    原文格式PDF

  • 申请/专利权人 THOMAS A. BAUDENDISTEL;

    申请/专利号US20020263409

  • 发明设计人 THOMAS A. BAUDENDISTEL;

    申请日2002-10-02

  • 分类号G01B7/16;G01L1/00;

  • 国家 US

  • 入库时间 2022-08-21 22:21:42

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