首页> 外国专利> CLAMPING AND DE-CLAMPING SEMICONDUCTOR WAFERS ON AN ELECTROSTATIC CHUCK USING WAFER INERTIAL CONFINEMENT BY APPLYING A SINGLE-PHASE SQUARE WAVE AC CLAMPING VOLTAGE

CLAMPING AND DE-CLAMPING SEMICONDUCTOR WAFERS ON AN ELECTROSTATIC CHUCK USING WAFER INERTIAL CONFINEMENT BY APPLYING A SINGLE-PHASE SQUARE WAVE AC CLAMPING VOLTAGE

机译:通过使用单相方波交流钳位电压采用晶片惯性约束,对静电夹头上的半导体晶片进行钳位和去钳位

摘要

The present invention is directed to a method for clamping a wafer to an electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the electrostatic chuck, wherein the determination is based, at least in part, on an inertial response time of the wafer. The wafer is placed on the electrostatic chuck, wherein a gap between the electrostatic chuck and the wafer is defined. The determined single-phase square wave clamping voltage is then applied, wherein the wafer is generally clamped to the electrostatic chuck within a predetermined distance, while an amount of electrostatic charge is generally not allowed to accumulate, thereby enabling a fast de-clamping of the wafer.
机译:本发明涉及一种使用单相方波交流钳位电压将晶片钳位到静电卡盘的方法。该方法包括确定用于静电卡盘的单相方波钳位电压,其中,该确定至少部分地基于晶片的惯性响应时间。将晶片放置在静电卡盘上,其中在静电卡盘和晶片之间限定间隙。然后施加确定的单相方波钳位电压,其中通常在预定距离内将晶片钳位到静电卡盘,而通常不允许积累一定量的静电荷,从而实现晶片的快速钳位硅片。

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