首页> 外国专利> Method of fabricating field emission arrays employing a hard mask to define column lines and another mask to define emitter tips and resistors

Method of fabricating field emission arrays employing a hard mask to define column lines and another mask to define emitter tips and resistors

机译:使用硬掩模定义列线并使用另一个掩模定义发射极尖端和电阻的场发射阵列的制造方法

摘要

An emission structure includes a resistor with at least one emitter tip thereover and at least one substantially vertically oriented conductive element positioned adjacent the resistor. The conductive element may contact the resistor. A method for fabricating the emission structure includes forming at least one conductive line, depositing at least one layer of semiconductive or conductive material over and laterally adjacent the at least one conductive line, and forming a hard mask in recessed areas of the surface of the uppermost material layer. The underlying material layer or layers are patterned through the hard mask, exposing substantially longitudinal center portions of the conductive lines. The remaining semiconductive or conductive material is patterned to form the emitter tip and resistor. At least the substantially central longitudinal portion of the conductive trace is removed to form the conductive element.
机译:发射结构包括电阻器,电阻器上具有至少一个发射器尖端,以及至少一个基本上垂直定向的导电元件,其邻近电阻器。导电元件可以接触电阻器。一种制造发射结构的方法,包括:形成至少一条导线;在至少一条导线上方并横向邻近该至少一条导线沉积至少一层半导电或导电材料层;以及在最上表面的凹陷区域中形成硬掩模。材料层。通过硬掩模对下面的一个或多个材料层进行构图,从而暴露出导线的基本上纵向的中央部分。剩余的半导体或导电材料被图案化以形成发射器尖端和电阻器。至少去除导电迹线的基本中央纵向部分以形成导电元件。

著录项

  • 公开/公告号US6957994B2

    专利类型

  • 公开/公告日2005-10-25

    原文格式PDF

  • 申请/专利权人 AMMAR DERRAA;

    申请/专利号US20030654226

  • 发明设计人 AMMAR DERRAA;

    申请日2003-09-02

  • 分类号H01J9/02;H01J9/00;

  • 国家 US

  • 入库时间 2022-08-21 22:20:44

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