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Programmable embedded DRAM current monitor

机译:可编程嵌入式DRAM电流监控器

摘要

This invention provides a method and apparatus for controlling the current drawn in a multi-bank memory device, for example, in a multi-bank memory system. The above and other features and advantages of the invention are achieved by a method and apparatus which controls access to a memory device to prevent an over-current condition. Each memory request is processed for each memory bank as an arbitrated event. A request is coordinated with the local memory controller circuitry controlling access to the memory bank. The memory bank is checked for its availability. The total current demand of the memory device is determined. If the memory bank request would not create an over-current condition and the memory bank is available, then the memory bank request is acknowledged and the memory request is carried out. Also provided is a method of fabricating such a memory device and also a method of operating such a memory device to access a selected memory bank.
机译:本发明提供了一种用于控制例如在多存储体存储系统中的多存储体存储装置中汲取的电流的方法和装置。本发明的上述和其他特征和优点通过一种控制对存储设备的访问以防止过电流情况的方法和设备来实现。将每个内存请求的每个内存请求作为仲裁事件进行处理。请求与控制对存储体的访问的本地存储控制器电路协调。检查存储库的可用性。确定存储设备的总电流需求。如果存储库请求不会产生过流情况,并且存储库可用,则确认存储库请求并执行存储请求。还提供了一种制造这种存储设备的方法以及一种操作这种存储设备以访问所选择的存储体的方法。

著录项

  • 公开/公告号US6857055B2

    专利类型

  • 公开/公告日2005-02-15

    原文格式PDF

  • 申请/专利权人 JOSEPH M. JEDDELOH;

    申请/专利号US20020218586

  • 发明设计人 JOSEPH M. JEDDELOH;

    申请日2002-08-15

  • 分类号G06F12/00;

  • 国家 US

  • 入库时间 2022-08-21 22:20:04

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