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Method of etching a SiN/Ir/TaN or SiN/Ir/Ti stack using an aluminum hard mask
Method of etching a SiN/Ir/TaN or SiN/Ir/Ti stack using an aluminum hard mask
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机译:使用铝硬掩模蚀刻SiN / Ir / TaN或SiN / Ir / Ti叠层的方法
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摘要
A method of etching includes preparing a substrate; depositing a first etch stop layer; forming an iridium bottom electrode layer; depositing a SiN layer; depositing and patterning an aluminum hard mask; etching a non-patterned SiN layer with a SiN selective etchant, stopping at the level of the iridium bottom electrode layer; etching the first etch stop layer with a second selective etchant; depositing an oxide layer and CMP the oxide layer to the level of the remaining SiN layer; wet etching the SiN layer to form a trench; depositing a layer of ferroelectric material in the trench formed by removal of the SiN layer; depositing a layer of high-k oxide; and completing the device, including metallization.
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