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Low temperature reflow method for filling high aspect ratio contacts
Low temperature reflow method for filling high aspect ratio contacts
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机译:低温回流法填充高纵横比触点
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摘要
Impurities are added to a conductor layer in a semiconductor process to prevent formation of void spaces and encourage complete filling of contacts. The impurities reduce the melting point and surface tension of a conductor layer, thereby improving filling characteristics during a reflow step. The impurities may be added at any time during the process, including during conductor deposition and/or reflow.
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