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Scribe street width reduction by deep trench and shallow saw cut

机译:通过深沟和浅锯切减少抄写员的街道宽度

摘要

In a method to singulate a semiconductor wafer (100) into chips, trench streets (107) of predetermined depth (105a) are formed across the first, active wafer surface (102) to define the outline of the chips (101). Thereafter, the fabrication of the active first wafer surface is completed and protected. Then, the wafer is flipped to expose the second wafer surface (103), and the wafer is subjected to a cutting saw. The saw is aligned with the trenches in the first surface so that the saw cuts the second surface along streets (106), which extend the trenches through the wafer. The saw is stopped cutting at a depth (105b), when the saw streets just coalesce with the trench streets, respectively, whereby the chips are completely singulated.
机译:在将半导体晶片( 100 )切成芯片的方法中,使用预定深度( 105 a < / I>)形成在有源晶片的第一表面( 102 )上,以定义芯片的轮廓( 101 )。之后,完成并保护有源第一晶片表面的制造。然后,翻转晶片以露出第二晶片表面( 103 ),并对晶片进行切割锯。锯与第一表面上的沟槽对齐,以使锯沿街道( 106 )切割第二表面,街道将沟槽延伸穿过晶片。当锯道分别刚好与沟槽道合并时,锯停止在深度( 105 b )处切割,从而使切屑完全分离。

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