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Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity
Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity
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机译:具有可调刻蚀电阻率的非晶碳氢(a-C:H)层的硬掩模
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摘要
A process of using a-C:H layer as a hardmask material with tunable etch resistivity in a RIE process that alleviates the addition of a layer forming gas to the etchant when making a semiconductor device, comprising:;a) providing a semiconductor substrate;;b) forming a hardmask of amorphous carbon-hydrogen (a-C:H) layer by plasma enhancement over the semiconductor substrate;;c) forming an opening in the hardmask layer to form an exposed surface portion of the hardmask layer; and;d) etching the exposed surface portion of the hardmask layer without the addition of a layer forming gas using RIE to form a trench feature with sufficient masking and side wall protection.
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机译:在RIE工艺中使用a:C:H层作为具有可调刻蚀电阻率的硬掩模材料的工艺,该工艺可减轻制造半导体器件时向刻蚀剂中添加成膜气体的步骤,包括:a)提供半导体衬底; b )通过等离子体增强在半导体衬底上形成非晶碳氢(aC:H)层的硬掩模; c)在硬掩模层中形成开口以形成硬掩模层的暴露表面部分; d)使用RIE蚀刻硬掩模层的暴露表面部分而不添加层形成气体,以形成具有足够的掩模和侧壁保护的沟槽特征。
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