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INTEGRATION SCHEME FOR AVOIDING PLASMA DAMAGE IN MRAM TECHNOLOGY
INTEGRATION SCHEME FOR AVOIDING PLASMA DAMAGE IN MRAM TECHNOLOGY
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机译:避免内存技术中等离子体损伤的集成方案
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摘要
A method of fabricating a magnetic memory device and a magnetic memory device structure. A buffer insulating layer is deposited over the top surface of the conductive hard mask of a magnetic memory cell. The buffer insulating layer is left remaining over the conductive hard mask top surface while the various material layers of the device are patterned and etched. The buffer insulating layer prevents the conductive hard mask top surface from being damaged during plasma-containing processes.
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