METHOD OF PRODUCING PLANE-PARALLEL STRUCTURES OF SILICON SUBOXIDE, SILICON DIOXIDE AND/OR SILICON CARBIDE, PLANE-PARALLEL STRUCTURES OBTAINABLE BY SUCH METHODS, AND THE USE THEREOF

摘要

A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way of the vaporisers. The carrier is pre-coated, before condensation of the silicon suboxide, with a soluble, inorganic or organic separating agent in a PVD method. All steps, including that of detaching the product by dissolution, can be carried out continuously and simultaneously at different locations. As final step, the SiOSUBy /SUBmay be oxidised to SiOSUB2 /SUBin an oxygen-containing gas at atmospheric pressure and temperatures of more than 200° C. or SiOSUBy /SUBmay be converted to SiC at the surface of the plane-parallel structures in a carbon-containing gas at from 500° C. to 1500° C. The products produced in that manner are distinguished by high uniformity of thickness.