METHOD AND APPARATUS FOR COLD WALL CHEMICAL VAPOR DEPOSITION

摘要

A CVD reactor (30) includes a vacuum chamber (32) having first and second thermal plates (54, 94) disposed therein and two independently-controlled multiple-zone heat sources (44, 64) disposed around the exterior thereof. The first heat source (44) has three zones (44a-44c) and the second heat source (64) has two zones (64a-64b). A wafer (12) is positioned below the first thermal plate (54) and immediately above the second thermal plate (94), thereby being indirectly heated from above by the first heat source (44) via the first thermal plate (54) and indirectly heated from below by the first zone (64b) of the second heat source (64) via the second thermal plate (94). A thermal ring plate (78) which laterally surrounds the edge of the wafer (12) absorbs heat energy emitted from the second zone (64a) of the second heat source (64) and heats the outer edge of the wafer (12). Embedded sensors (60, 86) measure and provide temperatures to a computer (190) which adjusts the power supplied to the heat sources (44, 64) in order to maintain a constant temperature.