In a scanning photolithographic device (54) used in the manufacture of semiconductors, a method and apparatus for varying the exposure dose as a function of distance in the scan direction compensating for the signature of the photolithographic device for reducing linewidth (116) variation in the scan direction. The linewidth (116) in the scan direction may vary for a particular device or tool (54) for a variety of reasons. This variation or signature is used in combination with a photosensitive resist response function (32) to vary the exposure dose as a function of distance in a scan direction, substantially reducing the linewidth (116) variation. A dose control (70) varies the exposure dose as a function of distance in a scan direction to correct linewidth (116) variations caused by characteristics of the photolithographic system (54). Linewidth (116) variations as a function of distance in the direction of scan are substantially reduced, resulting in more consistent and improved feature or element sizes.
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