METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO IMPROVE OFF-LEAKAGE CHARACTERISTIC DUE TO SHORT CHANNEL AND SHORT CHANNEL EFFECT

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to omit an HLD oxide process for forming an LDD region by forming the HLD oxide layer before forming the LDD region. CONSTITUTION: A first gate insulating layer(13a), a first gate electrode(14a), a second gate insulating layer(13b), and a second gate electrode(14b) are stacked on a first region and a second region of a substrate(11). A first LDD region(15) is formed on the substrate of both sides of the first gate electrode. A first insulating layer is formed on the entire surface of the substrate. A second LDD region(17) is formed on the substrate of both sides of the second gate electrode. A second insulating layer is formed on the first insulating layer. A sidewall spacer(19) is formed on each side of the first and the second gate electrodes by etching the first and the second insulating layers. A source/drain regions(20,21) are formed on the substrate of the first and the second gate electrodes and both sides of the sidewall spacer.