首页> 外国专利> SEMICONDUCTOR MEMORY DEVICE CAPABLE OF EFFECTIVELY REPAIRING DEFECT CELL, ESPECIALLY USING FUSE SET TO REPLACE A NORMAL WORDLINE WITH A SPARE WORDLINE

SEMICONDUCTOR MEMORY DEVICE CAPABLE OF EFFECTIVELY REPAIRING DEFECT CELL, ESPECIALLY USING FUSE SET TO REPLACE A NORMAL WORDLINE WITH A SPARE WORDLINE

机译:能够有效修复缺陷细胞的半导体存储器,特别是使用保险丝套件将正常字线替换为备用字线

摘要

Purpose: the semiconductor storage that can effectively repair defective unit effectively utilizes the fuse for being mounted on fuse box by reducing to be provided in the fuse that repair process utilizes. Construction: the semiconductor storage that can effectively repair defective unit includes a cell array (500) and multiple fuse sets (600). Each fuse sets (600) is provided with multiple address fuses and multiple dummy fuzes. When the normal word line access that wherein mistake is generated, a large amount of address fuses, which are used among dummy fuze, replaces with one to replace address path to access. A large amount of dummy fuzes replace the address path to elect with two dummy word lines when defect the results from adjacent first normal wordline of the second normal character line replacement from a large amount of dummy word lines.
机译:目的:可以有效地修复有缺陷的单元的半导体存储器通过减少提供在修复过程中使用的熔丝中而有效地利用了安装在熔丝盒上的熔丝。结构:可以有效修复故障单元的半导体存储器包括一个单元阵列(500)和多个保险丝组(600)。每个熔丝组(600)配备有多个地址熔丝和多个伪引信。当在其中产生错误的普通字线访问时,在伪引信中使用的大量地址熔断器替换为一个以替换要访问的地址路径。当从大量伪字线替换第二普通字符线的相邻第一普通字线的结果产生缺陷时,大量伪引信用两条伪字线替换地址路径以选择两条伪字线。

著录项

  • 公开/公告号KR20040095933A

    专利类型

  • 公开/公告日2004-11-16

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20030026963

  • 发明设计人 YOON HUI YONG;JANG HEON YONG;

    申请日2003-04-29

  • 分类号G11C29/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:33

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