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SEMICONDUCTOR MEMORY DEVICE CAPABLE OF EFFECTIVELY REPAIRING DEFECT CELL, ESPECIALLY USING FUSE SET TO REPLACE A NORMAL WORDLINE WITH A SPARE WORDLINE
SEMICONDUCTOR MEMORY DEVICE CAPABLE OF EFFECTIVELY REPAIRING DEFECT CELL, ESPECIALLY USING FUSE SET TO REPLACE A NORMAL WORDLINE WITH A SPARE WORDLINE
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机译:能够有效修复缺陷细胞的半导体存储器,特别是使用保险丝套件将正常字线替换为备用字线
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摘要
Purpose: the semiconductor storage that can effectively repair defective unit effectively utilizes the fuse for being mounted on fuse box by reducing to be provided in the fuse that repair process utilizes. Construction: the semiconductor storage that can effectively repair defective unit includes a cell array (500) and multiple fuse sets (600). Each fuse sets (600) is provided with multiple address fuses and multiple dummy fuzes. When the normal word line access that wherein mistake is generated, a large amount of address fuses, which are used among dummy fuze, replaces with one to replace address path to access. A large amount of dummy fuzes replace the address path to elect with two dummy word lines when defect the results from adjacent first normal wordline of the second normal character line replacement from a large amount of dummy word lines.
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