MONITORING BURN-IN TEST METHOD OF NAND TYPE FLASH MEMORY, IN WHICH AT LEAST TWO EXPECTED VALUES ARE USED AT ONE TEST TO DETERMINE PASS OR FAIL RESULT

摘要

Purpose: a monitoring burn-in test method of a NAND type flash memories sharply reduces the testing time of monitoring burn-in test (MBT) by being provided in primary test using different desired values. Construction: a monitoring burn-in test method of a NAND type flash memories, comprising the following steps: the valence value of (S12) I/O0 and I/O1 is read after the performance of th test models; If result is not matched, determine that valence value is elected from output valve or be not matched to (S15) expected value 1, maintains to count and increase counting, if be as a result matched; If result is not matched, determine that valence value is elected from output valve or be not matched to (S18) expected value 2, maintains to count and increase counting, if be as a result matched; Determine (S21) valence value counting or be not 2, as failure handling, if if result result be not 2 be as a pass 2 and processing.