SEMICONDUCTOR DEVICE INCLUDING FIELD OXIDE FOR BURYING TRENCH WITHOUT VOID AND METHOD FOR FORMING TRENCH THEREOF

摘要

PURPOSE: A semiconductor device and a method for forming a trench thereof are provided to prevent leakage current and short circuit due to a void by filling a trench with a field oxide. CONSTITUTION: A pad oxide layer(12) and a silicon nitride layer(13) are formed on a front surface of a semiconductor substrate(11). A trench is formed by etching the silicon nitride layer, the pad oxide layer, and a predetermined part of the semiconductor substrate. A liner oxide layer is formed on an inner wall of the trench. Electrons are implanted into a backside of the semiconductor substrate. An insulating layer is formed on the liner oxide layer to bury the trench.