PLASMA CHAMBER IMPROVING ETCHING RATE, ETCHING PROFILE, AND SELECTION RATIO

摘要

PURPOSE: A plasma chamber is provided to improve an etching rate, an etching profile, and a selection ratio by easily controlling dry etching. CONSTITUTION: A main power source part(30) has a main power source(31) having predetermined main frequency and a first impedance matching circuit(32). A bias power source part(40) has a bias power source(41) having predetermined bias frequency and a second impedance matching circuit(42). A mixer(50) is connected with the first impedance matching circuit and the second impedance matching circuit, and receives the main power source and the bias power source from the main power source part and the bias power source part. The mixer supplies a power source obtained by adding the main power source and the bias power source to a lower plate electrode(12).