首页> 外国专利> CIRCUIT FOR GENERATING POWER-UP SIGNAL IN SEMICONDUCTOR DEVICE, GENERATING METHOD THEREOF AND TESTING METHOD THEREFOR WITHOUT CIRCUIT REVISION

CIRCUIT FOR GENERATING POWER-UP SIGNAL IN SEMICONDUCTOR DEVICE, GENERATING METHOD THEREOF AND TESTING METHOD THEREFOR WITHOUT CIRCUIT REVISION

机译:在半导体装置中产生加电信号的电路,其产生方法及测试方法

摘要

PURPOSE: A circuit for generating a power-up signal in a semiconductor device, a generating method thereof and a testing method therefor are provided to adjust and test the power-up signal level through an external control signal without any changes of circuit. CONSTITUTION: A circuit for generating a power-up signal in a semiconductor device comprises a decoder(100) for outputting plural decoding signals(tm0-tm3) according to plural address signals(Ad0-Ad1), test enable signals(tm-en) and test disable signals(tm-dis); a selection part(200) for outputting plural selecting signals(p0-p3, n0-n3) according to the plural decoding signals(tm0-tm3); a power-up signal generation part(300) for generating power-up signals(Power-up) after deciding a detection level of an external source voltage according to the plural selecting signals(p0-p3, n0-n3). The power-up signal generation part(300) consists of a voltage divider for dividing the external source voltage and generating a gate voltage signal; a detection part for deciding the detection level of the external source voltage according to the gate voltage signal and the plural selecting signals; an output part for generating the power-up signal according to an output of the detection part.
机译:目的:提供一种用于在半导体器件中产生上电信号的电路,其产生方法及其测试方法,以通过外部控制信号来调整和测试上电信号电平,而无需改变电路。构成:一种在半导体器件中生成上电信号的电路,包括解码器(100),用于根据多个地址信号(Ad0-Ad1),测试使能信号(tm-en)输出多个解码信号(tm0-tm3)并测试禁用信号(tm-dis);选择部分(200),用于根据多个解码信号(tm0-tm3)输出多个选择信号(p0-p3,n0-n3);上电信号生成部(300),其根据多个选择信号(p0-p3,n0-n3)决定外部电源电压的检测电平之后,生成上电信号(Power-up)。上电信号生成部(300)由分压器构成,该分压器用于对外部源电压进行分压并生成栅极电压信号。检测部分,用于根据栅极电压信号和多个选择信号确定外部源电压的检测电平;输出部分,用于根据检测部分的输出来产生加电信号。

著录项

  • 公开/公告号KR20040110317A

    专利类型

  • 公开/公告日2004-12-31

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20030039554

  • 发明设计人 YOON JUN YEOL;

    申请日2003-06-18

  • 分类号G11C7/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:20

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