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Method for forming semiconductor memory device capable of preventing the silicidation of capacitor bottom electrode caused by silicon plasma treatment of TiN diffusion barrier
Method for forming semiconductor memory device capable of preventing the silicidation of capacitor bottom electrode caused by silicon plasma treatment of TiN diffusion barrier
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机译:能够防止由TiN扩散势垒的硅等离子体处理引起的电容器底部电极的硅化的半导体存储装置的形成方法
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摘要
PURPOSE: A method for manufacturing a semiconductor memory device is provided to prevent silicidation of a lower electrode, by using silicon-containing gas to perform a plasma treatment regarding a TiN diffusion barrier layer so that the TiN diffusion barrier layer is changed to a Ti-Si-N layer, by performing a cleaning process by a mixed solution of NH4OH and H2O and by eliminating a remaining silicon layer on the Ti-Si-N layer. CONSTITUTION: An interlayer dielectric(35) covering a semiconductor substrate(30) having a completed transistor is selectively etched to form a contact hole exposing a source/drain junction region(34) of the transistor. A TiN diffusion barrier layer is formed on the resultant structure including the contact hole. A plasma process is performed regarding the TiN diffusion barrier layer by using silicon-containing source gas so that at least a part of the TiN diffusion barrier layer is changed to a Ti-Si-N layer. A wet-cleaning process is performed to eliminate a remaining silicon layer on the Ti-Si-N layer. A capacitor composed of a lower electrode(38), a dielectric layer(39) and an upper electrode(40) is formed on the Ti-Si-N layer.
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