首页> 外国专利> METHOD FOR BONDING HEAT SINK OF LASER DIODE SEMICONDUCTOR AND LASER DIODE SEMICONDUCTOR TO QUICKLY TRANSFER AND RADIATE HEAT GENERATED FROM LASER DIODE TO METAL PLATE

METHOD FOR BONDING HEAT SINK OF LASER DIODE SEMICONDUCTOR AND LASER DIODE SEMICONDUCTOR TO QUICKLY TRANSFER AND RADIATE HEAT GENERATED FROM LASER DIODE TO METAL PLATE

机译:激光二极管和激光二极管的热沉键合以将激光二极管产生的热量快速转移并辐射到金属板上的方法

摘要

The present invention is made of the laser diode semiconductor of heat sink welding method and the laser diode as semiconductor, more specifically, being formed heat sink with prominent is the preferred copper (Copper of thermal conductance on the top of metal plate) quic is emitted to from laser diode. KLY transfers heat to metal plate and is related to the present invention can heat (Suffi). ;As described above, the metal plate 10 in the whole surface of lens cover 40 is combined, the metal plate of radiator 11 and 10 is 41 one projections, and equipped with laser beam (irradiation) laser diode 20, and is fixed below. The close-up shot of laser diode photodiode 21 is provided on laser diode 20, metal plate 10, for detecting the transmitting light beam from 20 to laser diode 20, photodiode terminal pins 30 are for connecting or being grounded, 21 is prominent in laser diode semiconductor, and radiator 11 is by the fine copper (Copper of temperature-sensitive front end) laser diode (20) constitutes. T can be heated by metal plate 10, and radiator 11 is the metal plate 10 by welding to melt the welding material being made of alloy (11a), and the alloy is especially radiated from fixing piece. It can be realized by the semiconductor laser diode of setting.
机译:本发明是由散热器焊接法的激光二极管半导体和作为半导体的激光二极管制成的,更具体地,形成具有突出的散热器,该散热器突出发出优选的铜(金属板顶部的导热铜)。从激光二极管。 KLY将热量传递到金属板上,并且涉及本发明的罐头加热(Suffi)。 ;如上所述,将透镜罩40的整个表面上的金属板10组合在一起,将辐射器11和10的金属板形成为41个突起,并搭载激光(照射)激光二极管20,并固定在下方。激光二极管光电二极管21的特写镜头设置在激光二极管20,金属板10上,用于检测从20到激光二极管20的传输光束,光电二极管端子销30用于连接或接地,在激光中突出21二极管半导体,以及辐射器11是由细铜(热敏前端铜)激光二极管(20)构成。 T可以由金属板10加热,散热器11是通过焊接使由合金(11a)构成的焊接材料熔融而成为金属板10,特别是从固定片放出合金。可以通过设定的半导体激光二极管来实现。

著录项

  • 公开/公告号KR20050007623A

    专利类型

  • 公开/公告日2005-01-21

    原文格式PDF

  • 申请/专利权人 KOSTEC SYS. CO. LTD.;

    申请/专利号KR20030047078

  • 发明设计人 HAN LEE YOUL;

    申请日2003-07-11

  • 分类号H01L23/48;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:01

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