METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO PREVENT ISOLATION LAYER IN FIELD REGION FROM BEING DAMAGED IN ETCHING GATE OXIDE LAYER FOR HIGH VOLTAGE DEVICE IN CORE DEVICE REGION

摘要

A kind of purpose: method; for manufacturing semiconductor device it is arranged to that a separation layer is prevented to be compromised in terms of etching the gate oxide for the high voltage device in a core device region in a field region; it is used for a gate oxide of a core device by being formed, gate oxide is protected by a nitride layer, white layer and by forming a gate oxide for high voltage device. Construction: a separation layer (112) is formed in semi-conductive substrate (110), wherein the first region, is used to form a high voltage device and the secondth area for a logical device, is defined. One barrier layer (117) is for preventing oxidation to be formed in the secondth area. A gate oxide (120) for high voltage device is formed in the first region. Barrier layer in the second region is eliminated. A gate oxide (130) for logical device is formed in the secondth area by monoxide processing procedure.