PURPOSE: A method for fabricating an elevated source-drain without a facet phenomenon is provided to embody a stable operation in a smaller region by solving a facet problem occurring in fabricating ESD(electrostatic discharge) by an SEG(selective epitaxial growth) method. CONSTITUTION: A gate oxide process is performed on a silicon substrate(100) to form a gate oxide layer(104). A gate poly layer is formed on the gate oxide layer to form a floating gate. NM and PM regions(102) are formed. An HLD(high temperature low pressure deposition) oxide layer is formed to fabricate an LDD(lightly doped drain) spacer. The HLD oxide layer on a region for forming ESD(110) is etched. The ESD is formed by an SEG method. An HLD oxide layer(114) is additionally formed on the HLD oxide layer and the ESD. A nitride layer is deposited. The nitride layer is etched back to form an LDD spacer of a dome type so that an ESD device without a facet effect is formed.
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