BIAS CONTROLLING APPARATUS WITH BIAS CONTROLLING PARTS FOR APPLYING RF POWER WITH OPTIMUM FREQUENCY

摘要

PURPOSE: A bias controlling apparatus is provided to improve etch selectivity and pattern profile by applying RF(Radio Frequency) power with optimum frequency adequate for a predetermined thin film to a plasma etching apparatus using a plurality of bias controlling parts. CONSTITUTION: A bias controlling apparatus includes a plurality of bias controlling parts and a switch(780) between an electrostatic chuck(200) and the plurality of bias controlling parts. Each bias controlling part includes a bias RF oscillator(750,760,770) and a bias matcher(720,730,740) between the bias RF oscillator and the switch.